BFP720H6327XTSA1, The BFP720 is a Silicon Germanium Carbon SiGeC NPN Heterojunction wideband Bipolar RF Transistor HBT.
В избранноеВ сравнение
- Обзор
- Характеристики
- Отзывы (0)
- Реквизиты
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement.
Отзывов нет