BFP640H6327XTSA1, RF Bipolar Transistors RF BIP TRANSISTOR
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RF BIP TRANSISTORS; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.5V; Transition Frequency ft:40GHz; Power Dissipation Pd:200mW; DC Collector Current:50mA; DC Current Gain hFE:110hFE; RF Transistor Case:SOT-343; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
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