BD139, 80V 1.25W 40@150mA,2V 1.5A NPN TO126 Bipolar Transistors BJT ROHS
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Артикул: BD139
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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTБиполярный (BJT) транзистор NPN 80V 1.5A 1.25W Through Hole SOT-32-3
| Дата загрузки | 18.02.2024 |
| Вес и габариты | |
| вес, г | 1 |
| Информация о производителе | |
| Производитель | STMicroelectronics |
| Бренд | STMicroelectronics |
| Основные | |
| base product number | BD139 -> |
| collector- base voltage vcbo | 80 V |
| collector- base voltage vcbo: | 80 V |
| collector-emitter breakdown voltage | 80V |
| collector-emitter saturation voltage | -0.5 V, +0.5 V |
| collector-emitter saturation voltage: | 500 mV |
| collector- emitter voltage vceo max | 80 V |
| collector- emitter voltage vceo max: | 80 V |
| configuration | Single |
| configuration: | Single |
| continuous collector current | 1.5 A |
| continuous collector current: | 1.5 A |
| current - collector cutoff (max) | 100nA (ICBO) |
| current - collector (ic) (max) | 1.5A |
| dc collector/base gain hfe min | 40 |
| dc collector/base gain hfe min: | 40 |
| dc current gain hfe max | 250 |
| dc current gain hfe max: | 250 |
| dc current gain (hfe) (min) @ ic, vce | 40 @ 150mA, 2V |
| eccn | EAR99 |
| emitter- base voltage vebo | 5 V |
| emitter- base voltage vebo: | 5 V |
| factory pack quantity | 2000 |
| factory pack quantity: factory pack quantity: | 2000 |
| height | 10.8 mm |
| htsus | 8541.29.0095 |
| категория | Электронные компоненты/Транзисторы |
| кол-во в упаковке | 50 |
| length | 7.8 mm |
| manufacturer | STMicroelectronics |
| manufacturer: | STMicroelectronics |
| maximum collector base voltage | 80 V |
| maximum collector emitter voltage | 80 V |
| maximum dc collector current | 1.5A |
| maximum dc collector current: | 1.5 A |
| maximum emitter base voltage | 5 V |
| maximum operating temperature | +150 C |
| maximum operating temperature: | +150 C |
| maximum power dissipation | 1.25 W |
| minimum dc current gain | 100, 40, 63 |
| minimum operating temperature | -65 C |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting style | Through Hole |
| mounting style: | Through Hole |
| mounting type | Through Hole |
| number of elements per chip | 1 |
| operating temperature | 150В°C (TJ) |
| other related documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
| package | Tube |
| package / case | TO-225AA, TO-126-3 |
| package / case: | SOT-32-3 |
| package type | SOT-32 |
| packaging | Tube |
| packaging: | Tube |
| партномер | 8003653747 |
| pd - power dissipation | 1.25W |
| pd - power dissipation: | 1.25 W |
| pin count | 3 |
| power - max | 1.25W |
| product category | Bipolar Transistors-BJT |
| product category: | Bipolar Transistors-BJT |
| product type: | BJTs-Bipolar Transistors |
| reach status | REACH Unaffected |
| rohs | Details |
| rohs status | ROHS3 Compliant |
| series | 500V Transistors |
| series: | BD139 |
| subcategory: | Transistors |
| supplier device package | SOT-32-3 |
| technology: | Si |
| transistor configuration | Single |
| transistor polarity | NPN |
| transistor polarity: | NPN |
| transistor type | NPN |
| unit weight | 0.002116 oz |
| vce saturation (max) @ ib, ic | 500mV @ 50mA, 500mA |
| voltage - collector emitter breakdown (max) | 80V |
| Время загрузки | 14:01:13 |
| width | 2.7 mm |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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