BD135-16, Bipolar Transistors - BJT NPN Silicon Trnsistr

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTTRANSISTOR, NPN, SOT-32; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:12.5W; DC Collector Current:1.5A; DC Current Gain hFE:40hFE; Transistor Case Style:SOT-32; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on):500mV; Continuous Collector Current Ic Max:3A; Current Ic Continuous a Max:1.5A; Current Ic hFE:500mA; Full Power Rating Temperature:25°C; Hfe Min:25; No. of Transistors:1; Power Dissipation Ptot Max:12.5W; Termination Type:Surface Mount Device; Voltage Vcbo:45V