Вес и габариты | |
collector- base voltage vcbo | 100 V |
collector-emitter saturation voltage | 0.5 V |
collector- emitter voltage vceo max | 80 V |
configuration | Single |
continuous collector current | 1 A |
dc collector/base gain hfe min | 100 |
dc current gain hfe max | 250 |
emitter- base voltage vebo | 6 V |
factory pack quantity | 1000 |
gain bandwidth product ft | 150 MHz |
manufacturer | Diodes Incorporated |
maximum dc collector current | 1 A |
maximum operating temperature | +150 C |
minimum operating temperature | -65 C |
mounting style | SMD/SMT |
package / case | SOT-89-3 |
packaging | Cut Tape or Reel |
pd - power dissipation | 2 W |
product category | Bipolar Transistors-BJT |
product type | BJTs-Bipolar Transistors |
qualification | AEC-Q101 |
subcategory | Transistors |
technology | Si |
transistor polarity | NPN |
вес, г | 0.2 |