Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 45V 800mA 100MHz 330mW Surface Mount SOT-23-3

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Вес и габариты
base product number	BCW66 ->
collector-emitter breakdown voltage	45V
current - collector cutoff (max)	20nA

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Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 45V 800mA 100MHz 330mW Surface Mount SOT-23-3

Вес и габариты
base product number	BCW66 ->
collector-emitter breakdown voltage	45V
current - collector cutoff (max)	20nA
current - collector (ic) (max)	800mA
dc current gain (hfe) (min) @ ic, vce	250 @ 100mA, 1V
eccn	EAR99
frequency - transition	100MHz
htsus	8541.21.0075
maximum dc collector current	800mA
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-236-3, SC-59, SOT-23-3
pd - power dissipation	330mW
power - max	330mW
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	SOT-23-3
transistor type	NPN
vce saturation (max) @ ib, ic	700mV @ 50mA, 500mA
voltage - collector emitter breakdown (max)	45V

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BCW66HTA