Вес и габариты
collector- base voltage vcbo	60 V
collector-emitter saturation voltage	500 mV
collector- emitter voltage vceo max	60 V

120 ₽

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Вес и габариты
collector- base voltage vcbo	60 V
collector-emitter saturation voltage	500 mV
collector- emitter voltage vceo max	60 V
configuration	Single
continuous collector current	1 A
dc collector/base gain hfe min	63 at 150 mA, 2 V
dc current gain hfe max	250 at 150 mA, 2 V
emitter- base voltage vebo	5 V
factory pack quantity	4000
gain bandwidth product ft	180 MHz
manufacturer	Nexperia
maximum dc collector current	2 A
maximum operating temperature	+150 C
minimum operating temperature	-55 C
mounting style	SMD/SMT
package / case	SOT-223-3
packaging	Cut Tape or Reel
pd - power dissipation	650 mW
product category	Bipolar Transistors-BJT
product type	BJTs-Bipolar Transistors
qualification	AEC-Q101
subcategory	Transistors
transistor polarity	NPN

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Кнопки

BCP55-16F