Вес и габариты
collector- base voltage vcbo	-100 V
collector-emitter saturation voltage	-0.5 V
collector- emitter voltage vceo max	-80 V

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Вес и габариты
collector- base voltage vcbo	-100 V
collector-emitter saturation voltage	-0.5 V
collector- emitter voltage vceo max	-80 V
configuration	Single
continuous collector current	-1 A
dc collector/base gain hfe min	63
dc current gain hfe max	250
emitter- base voltage vebo	-5 V
factory pack quantity	1000
gain bandwidth product ft	145 MHz
manufacturer	Nexperia
maximum dc collector current	-1 A
maximum operating temperature	+150 C
minimum operating temperature	-55 C
mounting style	SMD/SMT
package / case	SOT-223-3
packaging	Cut Tape or Reel
pd - power dissipation	1.35 W
product category	Bipolar Transistors-BJT
product type	BJTs-Bipolar Transistors
qualification	AEC-Q101
subcategory	Transistors
technology	Si
transistor polarity	PNP

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BCP53TX