Вес и габариты | |
collector- base voltage vcbo | -100 V |
collector-emitter saturation voltage | -0.5 V |
collector- emitter voltage vceo max | -80 V |
configuration | Single |
continuous collector current | -1 A |
dc collector/base gain hfe min | 63 |
dc current gain hfe max | 250 |
emitter- base voltage vebo | -5 V |
factory pack quantity | 1000 |
gain bandwidth product ft | 145 MHz |
manufacturer | NEXPERIA |
maximum dc collector current | -1 A |
maximum operating temperature | +150 C |
minimum operating temperature | -55 C |
mounting style | SMD/SMT |
package / case | SOT-223-3 |
packaging | Cut Tape or Reel |
pd - power dissipation | 1.35 W |
product category | Bipolar Transistors-BJT |
product type | BJTs-Bipolar Transistors |
qualification | AEC-Q101 |
subcategory | Transistors |
technology | Si |
transistor polarity | PNP |