Name: BCM56DSX, Bipolar Transistors - BJT BCM56DS SC-74
SKU: BCM56DSX

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Подробное описание

Вес и габариты
collector- base voltage vcbo:	100 V
collector-emitter saturation voltage:	500 mV
collector- emitter voltage vceo max:	80 V

78 ₽

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Бонус: 1.56 !

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Итого: 78 ₽

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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Вес и габариты
collector- base voltage vcbo:	100 V
collector-emitter saturation voltage:	500 mV
collector- emitter voltage vceo max:	80 V
configuration:	Dual
continuous collector current:	1 A
dc collector/base gain hfe min:	63
dc current gain hfe max:	250
emitter- base voltage vebo:	5 V
factory pack quantity: factory pack quantity:	3000
gain bandwidth product ft:	155 MHz
manufacturer:	Nexperia
maximum dc collector current:	1 A
maximum operating temperature:	+150 C
minimum operating temperature:	-55 C
mounting style:	SMD/SMT
package/case:	TSOP-6
packaging:	Reel, Cut Tape, MouseReel
part # aliases:	934070952115
pd - power dissipation:	400 mW
product category:	Bipolar Transistors-BJT
product type:	BJTs-Bipolar Transistors
qualification:	AEC-Q101
subcategory:	Transistors
technology:	Si
transistor polarity:	NPN
вес, г	0.01

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