BC856B-7-F, Bipolar Transistors - BJT PNP BIPOLAR

Оставить отзыв
В избранноеВ сравнение
Артикул: BC856B-7-F
Электронные компоненты Транзисторы Биполярные (BJTs) Diodes BC856B-7-F, Bipolar Transistors - BJT PNP BIPOLAR
Дата загрузки22.02.2024
Вес и габариты
вес, г0.01
Информация о производителе
ПроизводительDIODES INC.
БрендDIODES INC.
61
+
Бонус: 1.22 !
Бонусная программа
Итого: 61
Купить
  • Обзор
  • Характеристики
  • Отзывы (0)
  • Реквизиты
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTБиполярный (BJT) транзистор PNP 65V 100mA 200MHz 300mW Surface Mount SOT-23-3
Дата загрузки22.02.2024
Вес и габариты
вес, г0.01
Информация о производителе
ПроизводительDIODES INC.
БрендDIODES INC.
Основные
automotiveNo
base product numberBC856 ->
collector- base voltage vcbo-80 V
collector- base voltage vcbo:80 V
collector-emitter saturation voltage-650 mV
collector-emitter saturation voltage:250 mV
collector- emitter voltage vceo max-65 V
collector- emitter voltage vceo max:65 V
configurationSingle
configuration:Single
current - collector cutoff (max)15nA
current - collector (ic) (max)100mA
dc collector/base gain hfe min220 at-2 mA, -5 V
dc collector/base gain hfe min:220 at-2 mA, -5 V
dc current gain (hfe) (min) @ ic, vce220 @ 2mA, 5V
eccnEAR99
eccn (us)EAR99
emitter- base voltage vebo-5 V
emitter- base voltage vebo:5 V
eu rohsCompliant
factory pack quantity3000
factory pack quantity: factory pack quantity:3000
frequency - transition200MHz
gain bandwidth product ft200 MHz
gain bandwidth product ft:200 MHz
htsus8541.21.0075
категорияЭлектронные компоненты/Транзисторы
lead shapeGull-wing
manufacturerDiodes Incorporated
manufacturer:Diodes Incorporated
maximum base emitter saturation voltage (v)1.1 5mA 100mA
maximum collector base voltage-80 V
maximum collector base voltage (v)80
maximum collector cut-off current (na)15
maximum collector-emitter saturation voltage (v)0.3 0.5mA 10mA|0.65 5mA 100mA
maximum collector emitter voltage-65 V
maximum collector-emitter voltage (v)65
maximum dc collector current-200 mA
maximum dc collector current:100 mA
maximum dc collector current (a)0.1
maximum emitter base voltage-5 V
maximum emitter base voltage (v)5
maximum operating frequency200 MHz
maximum operating temperature+150 C
maximum operating temperature:+150 C
maximum operating temperature (°c)150
maximum power dissipation300 mW
maximum power dissipation (mw)350
minimum dc current gain220 2mA 5V
minimum operating temperature-65 C
minimum operating temperature:-65 C
minimum operating temperature (°c)-55
moisture sensitivity level (msl)1 (Unlimited)
mountingSurface Mount
mounting styleSMD/SMT
mounting style:SMD/SMT
mounting typeSurface Mount
number of elements per chip1
operating junction temperature (°c)-55 to 150
operating temperature-65В°C ~ 150В°C (TJ)
packageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / caseTO-236-3, SC-59, SOT-23-3
package/case:SOT-23-3
package typeSOT-23
packagingTape and Reel
партномер8006357152
part statusActive
pcb changed3
pd - power dissipation300 mW
pd - power dissipation:310 mW
pin count3
power - max300mW
ppapNo
product categoryBipolar Small Signal
product category:Bipolar Transistors-BJT
product typeBJTs-Bipolar Transistors
product type:BJTs-Bipolar Transistors
reach statusREACH Unaffected
rohs statusROHS3 Compliant
seriesBC856B
series:BC856B
standard package nameSOT-23
subcategoryTransistors
subcategory:Transistors
supplier device packageSOT-23-3
supplier packageSOT-23
technology:Si
transistor configurationSingle
transistor polarityPNP
transistor polarity:PNP
transistor typePNP
typePNP
vce saturation (max) @ ib, ic650mV @ 5mA, 100mA
voltage - collector emitter breakdown (max)65V
Время загрузки21:59:32
Отзывов нет
Меню
0Корзина
Товар добавлен в корзину!
Товар добавлен в список сравнения
Товар добавлен в список избранных
Профиль