BC847BLP-7
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Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 45V 100mA 100MHz 250mW Surface Mount 3-X1DFN1006
| Вес и габариты | |
| automotive | No |
| base product number | BC847 -> |
| collector- base voltage vcbo | 50 V |
| collector-emitter saturation voltage | 600 mV |
| collector- emitter voltage vceo max | 45 V |
| configuration | Single |
| current - collector cutoff (max) | 15nA (ICBO) |
| current - collector (ic) (max) | 100mA |
| dc collector/base gain hfe min | 200 |
| dc current gain (hfe) (min) @ ic, vce | 200 @ 2mA, 5V |
| eccn | EAR99 |
| eccn (us) | ear99 |
| emitter- base voltage vebo | 6 V |
| eu rohs | compliant |
| factory pack quantity | 3000 |
| frequency - transition | 100MHz |
| gain bandwidth product ft | 100 MHz |
| htsus | 8541.21.0075 |
| lead shape | no lead |
| manufacturer | DIODES INCORPORATED |
| maximum base emitter saturation voltage (v) | 0.7(Typ)0.5mA 10mA|0.9(Typ)5mA 100mA |
| maximum collector base voltage (v) | 50 |
| maximum collector-emitter saturation voltage (v) | 0.25 0.5mA 10mA|0.6 5mA 100mA |
| maximum collector-emitter voltage (v) | 45 |
| maximum dc collector current | 200 mA |
| maximum dc collector current (a) | 0.1 |
| maximum emitter base voltage (v) | 6 |
| maximum operating temperature | +150 C |
| maximum operating temperature (°c) | 150 |
| maximum power dissipation (mw) | 1000 |
| maximum transition frequency (mhz) | 100(Min) |
| minimum dc current gain | 200 2mA 5V |
| minimum operating temperature | -55 C |
| minimum operating temperature (°c) | -55 |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting | surface mount |
| mounting style | SMD/SMT |
| mounting type | Surface Mount |
| number of elements per chip | 1 |
| operating temperature | -55В°C ~ 150В°C (TJ) |
| package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| package / case | 3-UFDFN |
| packaging | Tape and Reel |
| part status | active |
| pcb changed | 3 |
| pd - power dissipation | 250 mW |
| pin count | 3 |
| power - max | 250mW |
| ppap | No |
| product category | Bipolar Small Signal |
| product type | BJTs-Bipolar Transistors |
| reach status | REACH Unaffected |
| rohs status | ROHS3 Compliant |
| series | BC847B |
| standard package name | DFN |
| subcategory | Transistors |
| supplier device package | 3-X1DFN1006 |
| supplier package | X1-DFN |
| transistor polarity | NPN |
| transistor type | NPN |
| type | NPN |
| vce saturation (max) @ ib, ic | 600mV @ 5mA, 100mA |
| voltage - collector emitter breakdown (max) | 45V |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
