Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Подробное описание

Вес и габариты
collector- base voltage vcbo	80 V
collector-emitter breakdown voltage	65V
collector-emitter saturation voltage	600 mV

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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Вес и габариты
collector- base voltage vcbo	80 V
collector-emitter breakdown voltage	65V
collector-emitter saturation voltage	600 mV
collector- emitter voltage vceo max	65 V
configuration	Single
dc collector/base gain hfe min	200
emitter- base voltage vebo	6 V
factory pack quantity	3000
gain bandwidth product ft	300 MHz
manufacturer	Diodes Incorporated
maximum dc collector current	200 mA
maximum operating temperature	+150 C
minimum operating temperature	-65 C
mounting style	SMD/SMT
package / case	SOT-23-3
packaging	Cut Tape or Reel
pd - power dissipation	300 mW
product category	Bipolar Transistors-BJT
product type	BJTs-Bipolar Transistors
series	BC846
subcategory	Transistors
transistor polarity	NPN
transistor type	NPN
вес, г	0.01

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Кнопки

BC846B-7-F