Транзисторы / Биполярные транзисторы / Сборки биполярных транзисторовкорпус: HUSON3, инфо: Биполярный транзистор NPN, 80 В, 1 А, 1.65W

Подробное описание

Вес и габариты
collector- base voltage vcbo:	100 V
collector-emitter saturation voltage:	500 mV
collector- emitter voltage vceo max:	80 V

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Вес и габариты
collector- base voltage vcbo:	100 V
collector-emitter saturation voltage:	500 mV
collector- emitter voltage vceo max:	80 V
configuration:	Single
continuous collector current:	1 A
emitter- base voltage vebo:	7 V
factory pack quantity: factory pack quantity:	3000
gain bandwidth product ft:	125 MHz
manufacturer:	Diodes Incorporated
maximum dc collector current:	2 A
maximum operating temperature:	+150 C
minimum operating temperature:	-65 C
mounting style:	SMD/SMT
package/case:	U-DFN2020-3
packaging:	Reel, Cut Tape, MouseReel
pd - power dissipation:	520 mW
product category:	Bipolar Transistors-BJT
product type:	BJTs-Bipolar Transistors
series:	BC56
subcategory:	Transistors
technology:	Si
transistor polarity:	NPN
вес, г	0.04

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Кнопки

BC56-16PA-7