Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 80V 4A 15MHz 25W Through Hole TO-220F

Подробное описание

Вес и габариты
current - collector cutoff (max)	100ВµA (ICBO)
current - collector (ic) (max)	4A
dc current gain (hfe) (min) @ ic, vce	40 @ 1A, 4V

410 ₽

– +

Бонус: 8.2 !

Бонусная программа

Итого: 410 ₽

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Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 80V 4A 15MHz 25W Through Hole TO-220F

Вес и габариты
current - collector cutoff (max)	100ВµA (ICBO)
current - collector (ic) (max)	4A
dc current gain (hfe) (min) @ ic, vce	40 @ 1A, 4V
eccn	EAR99
frequency - transition	15MHz
htsus	8541.29.0095
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	150В°C (TJ)
package	Bulk
package / case	TO-220-3 Full Pack
power - max	25W
rohs status	RoHS Compliant
supplier device package	TO-220F
transistor type	NPN
vce saturation (max) @ ib, ic	500mV @ 200mA, 2A
voltage - collector emitter breakdown (max)	80V

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Кнопки

2SC3851A