Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 20V 300mA 30MHz 150mW Surface Mount TO-236

Подробное описание

Вес и габариты
base product number	HN2D02 ->
collector- base voltage vcbo:	50 V
collector-emitter saturation voltage:	42 mV

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Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 20V 300mA 30MHz 150mW Surface Mount TO-236

Вес и габариты
base product number	HN2D02 ->
collector- base voltage vcbo:	50 V
collector-emitter saturation voltage:	42 mV
collector- emitter voltage vceo max:	20 V
configuration:	Single
current - collector cutoff (max)	100nA (ICBO)
current - collector (ic) (max)	300mA
dc collector/base gain hfe min:	200
dc current gain hfe max:	1200
dc current gain (hfe) (min) @ ic, vce	200 @ 4mA, 2V
eccn	EAR99
emitter- base voltage vebo:	25 V
factory pack quantity: factory pack quantity:	3000
frequency - transition	30MHz
gain bandwidth product ft:	30 MHz
htsus	8541.21.0095
manufacturer:	Toshiba
maximum dc collector current:	300 mA
maximum operating temperature:	+125 C
moisture sensitivity level (msl)	1 (Unlimited)
mounting style:	SMD/SMT
mounting type	Surface Mount
operating temperature	125В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-236-3, SC-59, SOT-23-3
package/case:	TO-236-3
packaging:	Reel, Cut Tape, MouseReel
pd - power dissipation:	150 mW
power - max	150mW
product category:	Bipolar Transistors-BJT
product type:	BJTs-Bipolar Transistors
qualification:	AEC-Q101
rohs status	RoHS Compliant
series:	2SC3326
subcategory:	Transistors
supplier device package	TO-236
technology:	Si
transistor polarity:	NPN
transistor type	NPN
vce saturation (max) @ ib, ic	100mV @ 3mA, 30mA
voltage - collector emitter breakdown (max)	20V

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Кнопки

2SC3326-A,LF