Вес и габариты
collector- base voltage vcbo	50 V
collector-emitter saturation voltage	0.1 V
collector- emitter voltage vceo max	50 V

7 ₽

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Итого: 7 ₽

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Вес и габариты
collector- base voltage vcbo	50 V
collector-emitter saturation voltage	0.1 V
collector- emitter voltage vceo max	50 V
configuration	Single
dc collector/base gain hfe min	70
dc current gain hfe max	400
emitter- base voltage vebo	5 V
factory pack quantity	3000
gain bandwidth product ft	80 MHz
manufacturer	Toshiba
maximum dc collector current	150 mA
maximum operating temperature	+125 C
minimum operating temperature	-55 C
mounting style	SMD/SMT
package / case	SC-59-3
packaging	Cut Tape or Reel
pd - power dissipation	150 mW
product category	Bipolar Transistors-BJT
product type	BJTs-Bipolar Transistors
series	2SA1162
subcategory	Transistors
transistor polarity	PNP
вес, г	0.008

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Кнопки

2SA1162-Y,LF