Дата загрузки | 21.02.2024 |
Вес и габариты | |
вес, г | 0.02 |
Информация о производителе | |
Производитель | Nexperia B.V. |
Бренд | Nexperia B.V. |
Основные | |
collector- base voltage vcbo: | 50 V |
collector- emitter voltage vceo max: | 50 V |
configuration: | Single |
continuous collector current: | 100 mA |
dc collector/base gain hfe min: | 120 |
dc current gain hfe max: | 120 at 1 mA, 6 V |
emitter- base voltage vebo: | 5 V |
factory pack quantity: factory pack quantity: | 10000 |
gain bandwidth product ft: | 100 MHz |
категория | Электронные компоненты/Транзисторы |
manufacturer: | Nexperia |
maximum dc collector current: | 200 mA |
maximum operating temperature: | +150 C |
minimum operating temperature: | -65 C |
mounting style: | SMD/SMT |
package / case: | DFN1006-3 |
партномер | 8017633583 |
part # aliases: | 9,34057E+11 |
pd - power dissipation: | 250 mW |
product category: | Bipolar Transistors-BJT |
product type: | BJTs-Bipolar Transistors |
qualification: | AEC-Q101 |
subcategory: | Transistors |
technology: | Si |
transistor polarity: | NPN |
Время загрузки | 14:31:21 |