| Дата загрузки | 21.02.2024 |
| Вес и габариты | |
| вес, г | 0.02 |
| Информация о производителе | |
| Производитель | Nexperia B.V. |
| Бренд | Nexperia B.V. |
| Основные | |
| collector- base voltage vcbo: | 50 V |
| collector- emitter voltage vceo max: | 50 V |
| configuration: | Single |
| continuous collector current: | 100 mA |
| dc collector/base gain hfe min: | 120 |
| dc current gain hfe max: | 120 at 1 mA, 6 V |
| emitter- base voltage vebo: | 5 V |
| factory pack quantity: factory pack quantity: | 10000 |
| gain bandwidth product ft: | 100 MHz |
| категория | Электронные компоненты/Транзисторы |
| manufacturer: | Nexperia |
| maximum dc collector current: | 200 mA |
| maximum operating temperature: | +150 C |
| minimum operating temperature: | -65 C |
| mounting style: | SMD/SMT |
| package / case: | DFN1006-3 |
| партномер | 8017633583 |
| part # aliases: | 9,34057E+11 |
| pd - power dissipation: | 250 mW |
| product category: | Bipolar Transistors-BJT |
| product type: | BJTs-Bipolar Transistors |
| qualification: | AEC-Q101 |
| subcategory: | Transistors |
| technology: | Si |
| transistor polarity: | NPN |
| Время загрузки | 14:31:21 |