Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор PNP 140V 16A 150W Through Hole TO-3

Подробное описание

Вес и габариты
current - collector cutoff (max)	10mA
current - collector (ic) (max)	16A
dc current gain (hfe) (min) @ ic, vce	15 @ 8A, 4V

2 400 ₽

– +

Бонус: 48 !

Бонусная программа

Итого: 2 400 ₽

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Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор PNP 140V 16A 150W Through Hole TO-3

Вес и габариты
current - collector cutoff (max)	10mA
current - collector (ic) (max)	16A
dc current gain (hfe) (min) @ ic, vce	15 @ 8A, 4V
eccn	EAR99
htsus	8541.29.0095
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-65В°C ~ 200В°C (TJ)
package	Tube
package / case	TO-204AA, TO-3
power - max	150W
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	TO-3
transistor type	PNP
vce saturation (max) @ ib, ic	1.4V @ 800mA, 8A
voltage - collector emitter breakdown (max)	140V

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2N6609 PBFREE