Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор PNP 70V 7A 4MHz 40W Through Hole TO-220

Подробное описание

Вес и габариты
current - collector cutoff (max)	1mA
current - collector (ic) (max)	7A
dc current gain (hfe) (min) @ ic, vce	30 @ 2A, 4V

370 ₽

– +

Бонус: 7.4 !

Бонусная программа

Итого: 370 ₽

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Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор PNP 70V 7A 4MHz 40W Through Hole TO-220

Вес и габариты
current - collector cutoff (max)	1mA
current - collector (ic) (max)	7A
dc current gain (hfe) (min) @ ic, vce	30 @ 2A, 4V
eccn	EAR99
frequency - transition	4MHz
htsus	8541.29.0095
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-65В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-220-3
power - max	40W
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
simulation models	http://www.centralsemi.com/docs/csm/2N6107.LIB
supplier device package	TO-220
transistor type	PNP
vce saturation (max) @ ib, ic	3.5V @ 3A, 7A
voltage - collector emitter breakdown (max)	70V

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Кнопки

2N6107 PBFREE