Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 60V 8A 4MHz 100W Through Hole TO-3

Подробное описание

Вес и габариты
current - collector cutoff (max)	500ВµA
current - collector (ic) (max)	8A
dc current gain (hfe) (min) @ ic, vce	750 @ 4A, 3V

1 560 ₽

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Бонус: 31.2 !

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Итого: 1 560 ₽

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Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 60V 8A 4MHz 100W Through Hole TO-3

Вес и габариты
current - collector cutoff (max)	500ВµA
current - collector (ic) (max)	8A
dc current gain (hfe) (min) @ ic, vce	750 @ 4A, 3V
eccn	EAR99
frequency - transition	4MHz
htsus	8541.29.0095
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-65В°C ~ 200В°C (TJ)
package	Tube
package / case	TO-204AA, TO-3
power - max	100W
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	TO-3
transistor type	NPN
vce saturation (max) @ ib, ic	3V @ 80mA, 8A
voltage - collector emitter breakdown (max)	60V

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2N6055 PBFREE