Name: 2N5551BU, Bipolar Transistors - BJT NPN Transistor General Purpose
Brand: ON Semiconductor***
SKU: 2N5551BU

Электронные компоненты Транзисторы Биполярные (BJTs) ON Semiconductor 2N5551BU, Bipolar Transistors - BJT NPN ...

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Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs.

Дата загрузки	20.02.2024
Вес и габариты
вес, г	1
Информация о производителе
Производитель	ON Semiconductor***
Бренд	ON Semiconductor***
Основные
collector- base voltage vcbo	180 V
collector-emitter saturation voltage	0.2 V
collector- emitter voltage vceo max	160 V
configuration	Single
continuous collector current	0.6 A
dc collector/base gain hfe min	80
dc current gain hfe max	250
emitter- base voltage vebo	6 V
factory pack quantity	1000
gain bandwidth product ft	300 MHz
height	4.7 mm
категория	Электронные компоненты/Транзисторы
length	4.7 mm
manufacturer	ON Semiconductor
maximum collector base voltage	180 V
maximum collector emitter voltage	160 V
maximum dc collector current	0.6 A
maximum emitter base voltage	6 V
maximum operating frequency	100 MHz
maximum operating temperature	+150 C
maximum power dissipation	625 mW
minimum operating temperature	-55 C
mounting style	Through Hole
mounting type	Through Hole
number of elements per chip	1
package / case	TO-92-3
package type	TO-92
packaging	Bulk
партномер	8006368961
part # aliases	2N5551BU_NL
pd - power dissipation	625 mW
pin count	3
product category	Bipolar Transistors-BJT
rohs	Details
series	2N5551
transistor configuration	Single
transistor polarity	NPN
transistor type	NPN
unit weight	0.006314 oz
Время загрузки	2:02:14
width	3.93 mm

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