Биполярный (BJT) транзистор PNP 40V 200mA 250MHz 600mW Through Hole TO-92

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Биполярный (BJT) транзистор PNP 40V 200mA 250MHz 600mW Through Hole TO-92

Вес и габариты
automotive	No
base product number	2N3906 ->
configuration	Single
current - collector (ic) (max)	200mA
dc current gain (hfe) (min) @ ic, vce	100 @ 10mA, 1V
eccn	EAR99
eccn (us)	EAR99
eu rohs	Compliant
frequency - transition	250MHz
htsus	8541.21.0075
lead shape	Formed
maximum base emitter saturation voltage (v)	0.85 1mA 10mA\|0.95 5mA 50mA
maximum collector base voltage (v)	40
maximum collector-emitter saturation voltage (v)	0.25 1mA 10mA\|0.4 5mA 50mA
maximum collector-emitter voltage (v)	40
maximum dc collector current (a)	0.2
maximum emitter base voltage (v)	5
maximum operating temperature (°c)	150
maximum power dissipation (mw)	600
maximum transition frequency (mhz)	250(Min)
minimum operating temperature (°c)	-55
moisture sensitivity level (msl)	Not Applicable
mounting	Through Hole
mounting type	Through Hole
number of elements per chip	1
operating temperature	-55В°C ~ 150В°C (TJ)
package	Cut Tape (CT)Tape & Box (TB)
package / case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
packaging	Ammo
part status	NRND
pcb changed	3
pin count	3
power - max	600mW
ppap	No
product category	Bipolar Small Signal
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
standard package name	TO-92
supplier device package	TO-92
supplier package	TO-92
transistor type	PNP
type	PNP
vce saturation (max) @ ib, ic	400mV @ 5mA, 50mA
voltage - collector emitter breakdown (max)	40V

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Кнопки

2N3906-AP