2N3704 PBFREE, Bipolar Transistors - BJT NPN 30V 800mA BULK HFE/300
Оставить отзыв
В избранноеВ сравнение
Артикул: 2N3704 PBFREE
- Обзор
- Характеристики
- Отзывы (0)
- Реквизиты
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTБиполярный (BJT) транзистор NPN 30V 100MHz Through Hole TO-92
| Дата загрузки | 23.02.2024 |
| Вес и габариты | |
| вес, г | 0.45 |
| Информация о производителе | |
| Производитель | Central Semiconductor Corp |
| Бренд | Central Semiconductor Corp |
| Основные | |
| automotive | No |
| collector- base voltage vcbo: | 50 V |
| collector-emitter saturation voltage: | 600 mV |
| collector- emitter voltage vceo max: | 30 V |
| configuration | Single |
| configuration: | Single |
| continuous collector current: | 800 mA |
| current - collector cutoff (max) | 100nA (ICBO) |
| dc collector/base gain hfe min: | 100 |
| dc current gain hfe max: | 300 |
| dc current gain (hfe) (min) @ ic, vce | 100 @ 50mA, 2V |
| eccn | EAR99 |
| eccn (us) | EAR99 |
| emitter- base voltage vebo: | 5 V |
| eu rohs | Compliant |
| factory pack quantity: factory pack quantity: | 2500 |
| frequency - transition | 100MHz |
| gain bandwidth product ft: | 100 MHz |
| htsus | 8541.21.0095 |
| категория | Электронные компоненты/Транзисторы |
| manufacturer: | Central Semiconductor |
| material | Si |
| maximum collector base voltage (v) | 50 |
| maximum collector-emitter saturation voltage (v) | 0.6@5mA@100mA |
| maximum collector-emitter voltage (v) | 30 |
| maximum dc collector current: | 800 mA |
| maximum dc collector current (a) | 0.8 |
| maximum emitter base voltage (v) | 5 |
| maximum operating temperature: | +150 C |
| maximum operating temperature (°c) | 150 |
| maximum power dissipation (mw) | 625 |
| maximum transition frequency (mhz) | 100(Min) |
| minimum dc current gain | 100@50mA@2V |
| minimum operating temperature: | -65 C |
| minimum operating temperature (°c) | -65 |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting | Through Hole |
| mounting style: | Through Hole |
| mounting type | Through Hole |
| number of elements per chip | 1 |
| operating temperature | -65В°C ~ 150В°C (TJ) |
| package | Bulk |
| package / case | TO-226-3, TO-92-3 (TO-226AA) |
| package / case: | TO-92 |
| packaging: | Bulk |
| партномер | 8004700443 |
| part status | Active |
| pcb changed | 3 |
| pd - power dissipation: | 625 mW |
| pin count | 3 |
| ppap | No |
| product category | Bipolar Small Signal |
| product category: | Bipolar Transistors-BJT |
| product type: | BJTs-Bipolar Transistors |
| reach status | REACH Unaffected |
| rohs status | ROHS3 Compliant |
| standard package name | TO |
| subcategory: | Transistors |
| supplier device package | TO-92 |
| supplier package | TO-92 |
| transistor polarity: | NPN |
| transistor type | NPN |
| type | NPN |
| voltage - collector emitter breakdown (max) | 30V |
| Время загрузки | 0:30:11 |
Отзывов нет
Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
![2SC3420-GR, Транзистор NPN 20В 5А 1.5Вт [TO-126F]](/wa-data/public/shop/products/04/04/300404/images/351600/351600.300x0.jpg "2SC3420-GR, Транзистор NPN 20В 5А 1.5Вт [TO-126F]")
![2SA1013-Y, Транзистор PNP 160В 1А 0.9Вт [TO-92LM]](/wa-data/public/shop/products/03/04/300403/images/351599/351599.300x0.jpg "2SA1013-Y, Транзистор PNP 160В 1А 0.9Вт [TO-92LM]")
