Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор PNP 40V 1A 175MHz 1W Through Hole TO-39

Подробное описание

Вес и габариты
current - collector cutoff (max)	100nA (ICBO)
current - collector (ic) (max)	1A
dc current gain (hfe) (min) @ ic, vce	40 @ 500mA, 1V

810 ₽

– +

Бонус: 16.2 !

Бонусная программа

Итого: 810 ₽

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Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор PNP 40V 1A 175MHz 1W Through Hole TO-39

Вес и габариты
current - collector cutoff (max)	100nA (ICBO)
current - collector (ic) (max)	1A
dc current gain (hfe) (min) @ ic, vce	40 @ 500mA, 1V
eccn	EAR99
frequency - transition	175MHz
htsus	8541.29.0075
категория продукта	Биполярные транзисторы - BJT
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-65В°C ~ 200В°C (TJ)
package	Bulk
package / case	TO-205AD, TO-39-3 Metal Can
подкатегория	Transistors
полярность транзистора	PNP
power - max	1W
размер фабричной упаковки	500
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
simulation models	http://www.centralsemi.com/docs/csm/2N3467.LIB
supplier device package	TO-39
тип продукта	BJTs - Bipolar Transistors
торговая марка	Central Semiconductor
transistor type	PNP
упаковка	Bulk
vce saturation (max) @ ib, ic	1V @ 100mA, 1A
voltage - collector emitter breakdown (max)	40V

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2N3467 PBFREE