Name: 2N3250 PBFREE, Bipolar Transistors - BJT PNP Gen Pur SS
Brand: Central Semiconductor Corp
SKU: 2N3250 PBFREE

Электронные компоненты Транзисторы Биполярные (BJTs) Central 2N3250 PBFREE, Bipolar Transistors - BJT PNP ...

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610 ₽

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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTБиполярный (BJT) транзистор PNP 40V 200mA 250MHz 360mW Through Hole TO-18

Дата загрузки	23.02.2024
Вес и габариты
вес, г	1
Информация о производителе
Производитель	Central Semiconductor Corp
Бренд	Central Semiconductor Corp
Основные
collector- base voltage vcbo:	50 V
collector-emitter saturation voltage:	500 mV
collector- emitter voltage vceo max:	40 V
configuration:	Single
current - collector (ic) (max)	200mA
dc current gain (hfe) (min) @ ic, vce	50 @ 10mA, 1V
eccn	EAR99
emitter- base voltage vebo:	5 V
factory pack quantity: factory pack quantity:	2000
frequency - transition	250MHz
gain bandwidth product ft:	250 MHz
htsus	8541.21.0075
категория	Электронные компоненты/Транзисторы
manufacturer:	Central Semiconductor
maximum dc collector current:	200 mA
maximum operating temperature:	+200 C
minimum operating temperature:	-65 C
moisture sensitivity level (msl)	1 (Unlimited)
mounting style:	Through Hole
mounting type	Through Hole
operating temperature	-65В°C ~ 200В°C (TJ)
package	Bulk
package / case	TO-206AA, TO-18-3 Metal Can
package / case:	TO-18-3
packaging:	Bulk
партномер	8005049505
pd - power dissipation:	360 mW
power - max	360mW
product category:	Bipolar Transistors-BJT
product type:	BJTs-Bipolar Transistors
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
subcategory:	Transistors
supplier device package	TO-18
transistor polarity:	PNP
transistor type	PNP
vce saturation (max) @ ib, ic	500mV @ 5mA, 50mA
voltage - collector emitter breakdown (max)	40V
Время загрузки	0:28:46

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