2N2222 PBFREE
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Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 30V 800mA 250MHz 500mW Through Hole TO-18
| Дата загрузки | 23.02.2024 |
| Информация о производителе | |
| Производитель | Central Semiconductor Corp |
| Бренд | Central Semiconductor Corp |
| Основные | |
| automotive | No |
| collector- base voltage vcbo: | 60 V |
| collector-emitter saturation voltage: | 1.6 V |
| collector- emitter voltage vceo max: | 30 V |
| configuration | Single |
| configuration: | Single |
| continuous collector current: | 800 mA |
| current - collector cutoff (max) | 10nA (ICBO) |
| current - collector (ic) (max) | 800mA |
| dc collector/base gain hfe min: | 100 |
| dc current gain hfe max: | 300 |
| dc current gain (hfe) (min) @ ic, vce | 100 @ 150mA, 10V |
| diameter | 5.84(Max) |
| eccn | EAR99 |
| eccn (us) | EAR99 |
| emitter- base voltage vebo: | 5 V |
| eu rohs | Compliant with Exemption |
| factory pack quantity: factory pack quantity: | 2000 |
| frequency - transition | 250MHz |
| gain bandwidth product ft: | 250 MHz |
| htsus | 8541.21.0075 |
| категория | Электронные компоненты/Транзисторы |
| lead shape | Through Hole |
| manufacturer: | Central Semiconductor |
| material | Si |
| maximum base emitter saturation voltage (v) | 1.3@15mA@150mA|2.6@50mA@500mA |
| maximum collector base voltage (v) | 60 |
| maximum collector-emitter saturation voltage (v) | 0.4@15mA@150mA|1.6@50mA@500mA |
| maximum collector-emitter voltage (v) | 30 |
| maximum dc collector current: | 800 mA |
| maximum dc collector current (a) | 0.8 |
| maximum emitter base voltage (v) | 5 |
| maximum operating temperature: | +200 C |
| maximum operating temperature (°c) | 200 |
| maximum power dissipation (mw) | 500 |
| maximum transition frequency (mhz) | 250(Min) |
| minimum operating temperature: | -65 C |
| minimum operating temperature (°c) | -65 |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting | Through Hole |
| mounting style: | Through Hole |
| mounting type | Through Hole |
| number of elements per chip | 1 |
| operating temperature | -65В°C ~ 200В°C (TJ) |
| package | Bulk |
| package / case | TO-206AA, TO-18-3 Metal Can |
| package / case: | TO-18-3 |
| packaging: | Bulk |
| партномер | 8005757242 |
| part status | Active |
| pcb changed | 3 |
| pd - power dissipation: | 500 mW |
| pin count | 3 |
| power - max | 500mW |
| ppap | No |
| product category | Bipolar Small Signal |
| product category: | Bipolar Transistors-BJT |
| product type: | BJTs-Bipolar Transistors |
| reach status | REACH Unaffected |
| rohs status | ROHS3 Compliant |
| standard package name | TO |
| subcategory: | Transistors |
| supplier device package | TO-18 |
| supplier package | TO-18 |
| transistor polarity: | NPN |
| transistor type | NPN |
| type | NPN |
| vce saturation (max) @ ib, ic | 1.6V @ 50mA, 500mA |
| voltage - collector emitter breakdown (max) | 30V |
| Время загрузки | 0:28:11 |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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