2N1711 PBFREE, Bipolar Transistors - BJT NPN Ampl/Switch
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Артикул: 2N1711 PBFREE
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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTБиполярный (BJT) транзистор NPN 50V 500mA 70MHz 800mW Through Hole TO-39
| Дата загрузки | 23.02.2024 |
| Вес и габариты | |
| вес, г | 01.02.2024 |
| Информация о производителе | |
| Производитель | Central Semiconductor Corp |
| Бренд | Central Semiconductor Corp |
| Основные | |
| automotive | No |
| collector- base voltage vcbo: | 75 V |
| collector-emitter saturation voltage: | 1.5 V |
| collector- emitter voltage vceo max: | 50 V |
| configuration | Single |
| configuration: | Single |
| continuous collector current: | 500 mA |
| current - collector cutoff (max) | 10nA (ICBO) |
| current - collector (ic) (max) | 500mA |
| dc collector/base gain hfe min: | 100 |
| dc current gain hfe max: | 300 |
| dc current gain (hfe) (min) @ ic, vce | 100 @ 150mA, 10V |
| diameter | 9.4(Max) |
| eccn | EAR99 |
| eccn (us) | EAR99 |
| emitter- base voltage vebo: | 7 V |
| eu rohs | Compliant |
| factory pack quantity: factory pack quantity: | 500 |
| frequency - transition | 70MHz |
| gain bandwidth product ft: | 70 MHz |
| htsus | 8541.21.0095 |
| категория | Электронные компоненты/Транзисторы |
| lead shape | Through Hole |
| manufacturer: | Central Semiconductor |
| material | Si |
| maximum base emitter saturation voltage (v) | 1.3@15mA@150mA |
| maximum collector base voltage (v) | 75 |
| maximum collector cut-off current (na) | 10 |
| maximum collector-emitter saturation voltage (v) | 1.5@15mA@150mA |
| maximum collector-emitter voltage (v) | 50 |
| maximum dc collector current: | 500 mA |
| maximum dc collector current (a) | 0.5 |
| maximum emitter base voltage (v) | 7 |
| maximum operating temperature: | +200 C |
| maximum operating temperature (°c) | 200 |
| maximum power dissipation (mw) | 800 |
| maximum transition frequency (mhz) | 70(Min) |
| minimum operating temperature: | -65 C |
| minimum operating temperature (°c) | -65 |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting | Through Hole |
| mounting style: | Through Hole |
| mounting type | Through Hole |
| number of elements per chip | 1 |
| operating junction temperature (°c) | -65 to 200 |
| operating temperature | -65В°C ~ 200В°C (TJ) |
| package | Box |
| package / case | TO-205AD, TO-39-3 Metal Can |
| package / case: | TO-39 |
| packaging: | Bulk |
| партномер | 8005049473 |
| part status | Active |
| pcb changed | 3 |
| pd - power dissipation: | 800 mW |
| pin count | 3 |
| power - max | 800mW |
| ppap | No |
| product category | Bipolar Power |
| product category: | Bipolar Transistors-BJT |
| product type: | BJTs-Bipolar Transistors |
| reach status | REACH Unaffected |
| rohs status | ROHS3 Compliant |
| standard package name | TO |
| subcategory: | Transistors |
| supplier device package | TO-39 |
| supplier package | TO-39 |
| transistor polarity: | NPN |
| transistor type | NPN |
| type | NPN |
| vce saturation (max) @ ib, ic | 1.5V @ 15mA, 150mA |
| voltage - collector emitter breakdown (max) | 50V |
| Время загрузки | 0:28:15 |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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