STGWA40HP65FB2, БТИЗ транзистор, 72 А, 1.55 В, 227 Вт, 650 В, TO-247, 3 вывод(-ов)
В избранноеВ сравнение
- Обзор
- Характеристики
- Отзывы (0)
- Реквизиты
HB/HB2 Series Insulated-Gate Bipolar TransistorsSTMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Отзывов нет
![NCE3050, Транзистор MOSFET N-канал 30V 50A [TO-220]](/wa-data/public/shop/products/34/17/211734/images/243267/243267.300x0.jpg "NCE3050, Транзистор MOSFET N-канал 30V 50A [TO-220]")
![KBP210 (RS207), Диодный мост 2А 1000В [KBP]](/wa-data/public/shop/products/33/37/123733/images/155187/155187.300x0.jpg "KBP210 (RS207), Диодный мост 2А 1000В [KBP]")
