Name: STGD6NC60H-1, IGBT Transistors N-channel 600 V, 7 A very fast IGBT
SKU: STGD6NC60H-1

STGD6NC60H-1, IGBT Transistors N-channel 600 V, 7 A very fast IGBT

Подробное описание

Основные
вес, г	4
factory pack quantity: factory pack quantity:	3000
manufacturer:	STMicroelectronics
maximum operating temperature:	+150 C

330 ₽

– +

Бонус: 6.6 !

Бонусная программа

Итого: 330 ₽

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Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

Основные
вес, г	4
factory pack quantity: factory pack quantity:	3000
manufacturer:	STMicroelectronics
maximum operating temperature:	+150 C
minimum operating temperature:	-55 C
mounting style:	Through Hole
product category:	IGBT Transistors
product type:	IGBT Transistors
series:	STGD6NC60H-1
subcategory:	IGBTs
packaging:	Tube
Вес и габариты
package/case:	IPAK-3
tradename:	PowerMESH
pd - power dissipation:	62.5 W
technology:	Si
configuration:	Single
collector- emitter voltage vceo max:	600 V
collector-emitter saturation voltage:	1.9 V
continuous collector current at 25 c:	15 A
gate-emitter leakage current:	100 nA
maximum gate emitter voltage:	20 V

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