Name: RGW00TK65DGVC11, БТИЗ транзистор, 45 А, 1.5 В, 89 Вт, 650 В, TO-3PFM, 3 вывод(-ов)
SKU: RGW00TK65DGVC11

RGW00TK65DGVC11, БТИЗ транзистор, 45 А, 1.5 В, 89 Вт, 650 В, TO-3PFM, 3 вывод(-ов)

Подробное описание

Основные
вес, г	6.346
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-40В°C ~ 175В°C (TJ)

900 ₽

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Бонус: 18 !

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Итого: 900 ₽

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IGBT Trench Field Stop 650V 45A 89W сквозное отверстие TO-3PFM

Основные
вес, г	6.346
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-40В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-3PFM, SC-93-3
rohs status	ROHS3 Compliant
eccn	EAR99
htsus	8541.29.0095
supplier device package	TO-3PFM
base product number	RGW00 ->
input type	Standard
Вес и габариты
current - collector (ic) (max)	45A
current - collector pulsed (icm)	200A
gate charge	141nC
igbt type	Trench Field Stop
power - max	89W
switching energy	1.18mJ (on), 960ВµJ (off)
td (on/off) @ 25в°c	52ns/180ns
vce(on) (max) @ vge, ic	1.9V @ 15V, 50A
voltage - collector emitter breakdown (max)	650V
test condition	400V, 50A, 10Ohm, 15V
reverse recovery time (trr)	95ns

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RGW00TK65DGVC11, БТИЗ транзистор, 45 А, 1.5 В, 89 Вт, 650 В, TO-3PFM, 3 вывод(-ов)