IGB20N60H3ATMA1, БТИЗ транзистор, 40 А, 1.95 В, 170 Вт, 600 В, TO-263 (D2PAK), 3 вывод(-ов)
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Полупроводники - Дискретные\БТИЗ\БТИЗ ОдиночныеHigh speed IGBT in Trench and fieldstop technology suitable for use in uninterruptible power supplies, welding converters and converters with high switching frequency.
• TRENCHSTOP™ technology offering very low turn-off energy• Low VCEsat and low EMI• Qualified according to JEDEC for target applications
• TRENCHSTOP™ technology offering very low turn-off energy• Low VCEsat and low EMI• Qualified according to JEDEC for target applications
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