Name: FP75R12KT4B15BOSA1, Trans IGBT Module N-CH 1200V 75A 385mW 35-Pin ECONO3-3 Tray
SKU: FP75R12KT4B15BOSA1

FP75R12KT4B15BOSA1, Trans IGBT Module N-CH 1200V 75A 385mW 35-Pin ECONO3-3 Tray

Подробное описание

Основные
moisture sensitivity level (msl)	Not Applicable
mounting type	Chassis Mount
operating temperature	-40В°C ~ 150В°C
package	Bulk

39 980 ₽

– +

Бонус: 799.6 !

Бонусная программа

Итого: 39 980 ₽

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Diodes, Transistors and Thyristors\IGBT Transistors\IGBT ModuleTrans IGBT Module N-CH 1200V 75A 385000mW 35-Pin ECONO3-3 Tray

Основные
moisture sensitivity level (msl)	Not Applicable
mounting type	Chassis Mount
operating temperature	-40В°C ~ 150В°C
package	Bulk
package / case	Module
eccn	EAR99
htsus	8541.29.0095
reach status	REACH Unaffected
supplier device package	Module
pin count	35
packaging	Tray
automotive	No
eu rohs	Compliant with Exemption
maximum operating temperature (°c)	150
mounting	Screw
part status	active
pcb changed	35
ppap	No
supplier package	ECONO3-3
base product number	FP75R12 ->
eccn (us)	ear99
maximum power dissipation (mw)	385000
minimum operating temperature (°c)	-40
configuration	Array 7
Вес и габариты
channel type	N
input	Standard
current - collector (ic) (max)	75A
igbt type	Trench Field Stop
power - max	385W
vce(on) (max) @ vge, ic	2.15V @ 15V, 75A
voltage - collector emitter breakdown (max)	1200V
current - collector cutoff (max)	1mA
input capacitance (cies) @ vce	4.3nF @ 25V
ntc thermistor	Yes
maximum collector-emitter voltage (v)	1200
maximum continuous collector current (a)	75
maximum gate emitter leakage current (ua)	0.1
maximum gate emitter voltage (v)	±20
typical collector emitter saturation voltage (v)	1.85

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