APTGT50TL601G, IGBT Modules DOR CC8047

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Артикул: APTGT50TL601G
APTGT50TL601G, IGBT Modules DOR CC8047
Основные
вес, г80
moisture sensitivity level (msl)1 (Unlimited)
mounting typeChassis Mount
operating temperature-40В°C ~ 175В°C (TJ)
16 700
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Semiconductors\Discrete Semiconductors\Transistors\IGBT ModulesIGBT Power ModulesMicrochip IGBT Power Modules are a full range of IGBT power modules with different Trench and Field Stop generation offering optimized switching and conduction losses performance. Power module part numbers identify the type of IGBT employed. The Trench5 IGBT family complements Micochip's IGBT power module product offering and is the perfect replacement part for NPT IGBTs. Microchip SiC discrete and module products can be considered as alternative solutions for applications requiring switching frequencies above 20kHz.
Основные
вес, г80
moisture sensitivity level (msl)1 (Unlimited)
mounting typeChassis Mount
operating temperature-40В°C ~ 175В°C (TJ)
packageBulk
package / caseSP1
rohs statusRoHS Compliant
eccnEAR99
htsus8541.29.0095
reach statusREACH Unaffected
supplier device packageSP1
base product numberAPTGT50 ->
configurationThree Level Inverter
factory pack quantity: factory pack quantity:1
manufacturer:Microchip
maximum operating temperature:+100 C
minimum operating temperature:-40 C
mounting style:Chassis Mount
product category:IGBT Modules
product type:IGBT Modules
product:IGBT Silicon Modules
subcategory:IGBTs
packaging:Tube
Вес и габариты
package/case:SP1-12
inputStandard
pd - power dissipation:176 W
technology:Si
current - collector (ic) (max)80A
igbt typeTrench Field Stop
power - max176W
vce(on) (max) @ vge, ic1.9V @ 15V, 50A
voltage - collector emitter breakdown (max)600V
current - collector cutoff (max)250ВµA
input capacitance (cies) @ vce3.15nF @ 25V
ntc thermistorNo
collector- emitter voltage vceo max:600 V
collector-emitter saturation voltage:1.5 V
continuous collector current at 25 c:80 A
gate-emitter leakage current:600 nA
maximum gate emitter voltage:20 V
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