APTGT35A120T1G, IGBT Modules Trench Field Stop 1200V 55A 208W

Оставить отзыв
В избранноеВ сравнение
Артикул: APTGT35A120T1G
APTGT35A120T1G, IGBT Modules Trench Field Stop 1200V 55A 208W
Основные
вес, г80
factory pack quantity: factory pack quantity:1
manufacturer:Microchip
maximum operating temperature:+100 C
14 580
+
Бонус: 291.6 !
Бонусная программа
Итого: 14 580
Купить
  • Обзор
  • Характеристики
  • Отзывы (0)
  • Реквизиты
Semiconductors\Discrete Semiconductors\Transistors\IGBT ModulesIGBT Power ModulesMicrochip IGBT Power Modules are a full range of IGBT power modules with different Trench and Field Stop generation offering optimized switching and conduction losses performance. Power module part numbers identify the type of IGBT employed. The Trench5 IGBT family complements Micochip's IGBT power module product offering and is the perfect replacement part for NPT IGBTs. Microchip SiC discrete and module products can be considered as alternative solutions for applications requiring switching frequencies above 20kHz.
Основные
вес, г80
factory pack quantity: factory pack quantity:1
manufacturer:Microchip
maximum operating temperature:+100 C
minimum operating temperature:-40 C
mounting style:Chassis Mount
product category:IGBT Modules
product type:IGBT Modules
product:IGBT Silicon Modules
subcategory:IGBTs
packaging:Tube
Вес и габариты
package/case:SP1-12
pd - power dissipation:208 W
technology:Si
configuration:Dual
collector- emitter voltage vceo max:1.2 kV
collector-emitter saturation voltage:1.7 V
continuous collector current at 25 c:55 A
gate-emitter leakage current:400 nA
maximum gate emitter voltage:20 V
Отзывов нет
Меню
0Корзина
Товар добавлен в корзину!
Товар добавлен в список сравнения
Товар добавлен в список избранных
Профиль