MOSFET, Single - N-Channel, 650V, 80A, TO-247

Подробное описание

Основные
вес, г	6.3
moisture sensitivity level (msl)	Not Applicable
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)

3 890 ₽

– +

Бонус: 77.8 !

Бонусная программа

Итого: 3 890 ₽

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Diode ModulesN-канал 650V 80A (Tc) 890W (Tc) сквозное отверстие TO-247-4L

Основные
вес, г	6.3
moisture sensitivity level (msl)	Not Applicable
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-247-4
eccn	EAR99
htsus	8541.29.0095
reach status	REACH Unaffected
supplier device package	TO-247-4L
california prop 65	Warning Information
series	HiPerFETв„ў ->
Вес и габариты
technology	MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c	80A (Tc)
drain to source voltage (vdss)	650V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	140nC @ 10V
input capacitance (ciss) (max) @ vds	8300pF @ 25V
power dissipation (max)	890W (Tc)
rds on (max) @ id, vgs	38mOhm @ 500mA, 10V
vgs (max)	В±30V
vgs(th) (max) @ id	5V @ 4mA

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