- Обзор
- Характеристики
- Отзывы (0)
- Реквизиты
RF & Wireless\RF Integrated Circuits\RF AmplifierQPA2212D Ka-Band GaN Power Amplifier Qorvo QPA2212D Ka-Band GaN Power Amplifier is fabricated using a 0.15µm Gallium Nitride on Silicon Carbide (GaN on SiC) process (QGaN15). Operating between 27GHz and 31GHz, the QPA2212D achieves 10W linear power with -25dBc intermodulation distortion and 22dB small-signal gain. Saturated output power is 25W with a power-added efficiency of 25%.
Отзывов нет