MW7IC2020NT1, RF Amplifier HV7IC 2GHz 20W PQFN8X8

RF & Wireless\RF Integrated Circuits\RF AmplifierMW7IC2020NT1 is a RF LDMOS wideband integrated power amplifier. This wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170MHz. This multi-stage structure is rated for 26 to 32Volt operation and covers all typical cellular base station modulation formats. Typical single-carrier W-CDMA performance: VDD = 28Volts, IDQ1 =40mA, IDQ2 = 230mA, Pout = 2.4Watts Avg., IQ magnitude clipping, channel bandwidth = 3.84MHz, Input signal PAR = 7.5dB at 0.01% probability on CCDF (driver application-2100MHz). Capable of handling 10: 1 VSWR, at 32Vdc, 2140MHz, Pout = 33Watts CW (3dB input. overdrive from rated Pout). Typical Pout at 1 dB compression point ≃ 20Watts CW. • Characterized with series equivalent large signal impedance parameters and common source S-parameter• On-chip matching (50 ohm input, DC blocked)• Integrated quiescent current temperature compensation with enable/disable function• Integrated ESD protection• 2V typical gate threshold voltage (VDS = 10Vdc, ID = 12µAdc, on characteristics)• 2.9VDC typ gate quiescent voltage (VDS = 28VDC, IDQ1 = 40mADC, on characteristics)• 6.9VDC typ fixture gate quiescent voltage (VDD = 28VDC, IDQ1 = 40mADC, measured in functional test)• 32.6dB power gain, 17% power added efficiency• Adjacent channel power ratio ACPR of -51.4dBc typical