CMPA601C025F, RF Amplifier GaN MMIC Power Amp 6.0-12.0GHz, 25 Watt

RF & Wireless\RF Integrated Circuits\RF AmplifierGaN HEMT-Based MMIC Power AmplifiersWolfspeed GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) Based MMIC (Monolithic Microwave Integrated Circuit) Power Amplifiers are optimized for high-power applications, such as ultra-broadband amplifiers, satellite uplinks, and test instrumentation. GaN has superior properties compared to Silicon or Gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. These MMIC Power Amplifiers enable very wide bandwidths to be achieved in a small footprint.