S29GL512T11FHIV20, NOR Flash Parallel 3V/3.3V 512M-bit 64M x 8/32M x 16 110ns 64-Pin Fortified BGA T

Semiconductor - IC > Memory > Parallel NOR FlashS29GL01GT/512GT MirrorBit® Eclipse™ Flash MemoryInfineon Technologies S29GL01GT / S29GL512GT MirrorBit® Eclipse™ Flash Memory offers a page access time as fast as 15ns with a corresponding random access time as quick as 100ns. These devices feature a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This feature results in faster effective programming time than standard programming algorithms. The Infineon Technologies S29GL01GT / S29GL512GT is ideal for today"s embedded applications requiring higher density, better performance, and lower power consumption.