Полупроводники - Микросхемы\Память\SRAMSRAM - ИС асинхронной памяти 16 Мбайт (1M x 16) Параллельный 10ns 48-miniBGA (9x11)

Подробное описание

Основные
вес, г	0.45
moisture sensitivity level (msl)	3 (168 Hours)
mounting type	Surface Mount
operating temperature	-40В°C ~ 85В°C (TA)

5 160 ₽

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Полупроводники - Микросхемы\Память\SRAMSRAM - ИС асинхронной памяти 16 Мбайт (1M x 16) Параллельный 10ns 48-miniBGA (9x11)

Основные
вес, г	0.45
moisture sensitivity level (msl)	3 (168 Hours)
mounting type	Surface Mount
operating temperature	-40В°C ~ 85В°C (TA)
package	Tray
package / case	48-TFBGA
rohs status	ROHS3 Compliant
eccn	3A991B2A
htsus	8542.32.0041
reach status	REACH Unaffected
supplier device package	48-miniBGA (9x11)
pin count	48
eu rohs	compliant
lead shape	Ball
maximum operating temperature (°c)	85
mounting	surface mount
part status	active
pcb changed	48
standard package name	BGA
supplier package	TFBGA
voltage - supply	2.4V ~ 3.6V
eccn (us)	ear99
minimum operating temperature (°c)	-40
supplier temperature grade	Industrial
hts	8542.32.00.41
package height	0.9(Max)
package length	11
package width	9
maximum operating supply voltage (v)	3.6
process technology	CMOS
Вес и габариты
minimum operating supply voltage (v)	2.4
typical operating supply voltage (v)	2.5\|3.3
technology	SRAM - Asynchronous
number of ports	1
memory size	16Mb (1M x 16)
memory type	Volatile
memory format	SRAM
chip density (bit)	16M
max. access time (ns)	10
operating current (ma)	95
number of bits/word (bit)	16
number of words	1M
timing type	Asynchronous
address bus width (bit)	20
access time	10ns
memory interface	Parallel
write cycle time - word, page	10ns
data rate architecture	SDR

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