Integrated Circuits (ICs)\MemorySDRAM - ИС памяти DDR 512 МБ (64M x 8) Параллельный 200 МГц 700ps 66-TSOP II

Подробное описание

Основные
moisture sensitivity level (msl)	3 (168 Hours)
mounting type	Surface Mount
operating temperature	0В°C ~ 70В°C (TA)
package	Tray

1 600 ₽

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Бонус: 32 !

Бонусная программа

Итого: 1 600 ₽

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Integrated Circuits (ICs)\MemorySDRAM - ИС памяти DDR 512 МБ (64M x 8) Параллельный 200 МГц 700ps 66-TSOP II

Основные
moisture sensitivity level (msl)	3 (168 Hours)
mounting type	Surface Mount
operating temperature	0В°C ~ 70В°C (TA)
package	Tray
package / case	66-TSSOP (0.400"", 10.16mm Width)
rohs status	ROHS3 Compliant
eccn	EAR99
htsus	8542.32.0028
reach status	REACH Unaffected
supplier device package	66-TSOP II
voltage - supply	2.3V ~ 2.7V
Вес и габариты
technology	SDRAM - DDR
memory size	512Mb (64M x 8)
memory type	Volatile
memory format	DRAM
access time	700ps
clock frequency	200MHz
memory interface	Parallel
write cycle time - word, page	15ns

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