Полупроводники - Микросхемы\Память\SRAMSRAM - микросхема асинхронной памяти 2 Мб (128 КБ x 16), параллельная 10 нс 44-TSOP II

Подробное описание

Основные
вес, г	2.56
moisture sensitivity level (msl)	3 (168 Hours)
mounting type	Surface Mount
operating temperature	-40В°C ~ 85В°C (TA)

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Основные
вес, г	2.56
moisture sensitivity level (msl)	3 (168 Hours)
mounting type	Surface Mount
operating temperature	-40В°C ~ 85В°C (TA)
package	Tray
package / case	44-TSOP (0.400"", 10.16mm Width)
rohs status	ROHS3 Compliant
eccn	3A991B2A
htsus	8542.32.0041
video file	CypressвЂ™ IoT Memory: Power Snooze SRAM
reach status	REACH Unaffected
supplier device package	44-TSOP II
pin count	44
packaging	Tray
automotive	No
eu rohs	compliant
lead shape	Gull-wing
maximum operating temperature (°c)	85
mounting	surface mount
part status	active
pcb changed	44
ppap	No
standard package name	SOP
supplier package	TSOP-II
base product number	CY7C1011 ->
voltage - supply	3V ~ 3.6V
eccn (us)	ear99
minimum operating temperature (°c)	-40
supplier temperature grade	Industrial
maximum operating supply voltage (v)	3.6
process technology	90nm, CMOS
Вес и габариты
minimum operating supply voltage (v)	3
typical operating supply voltage (v)	3.3
technology	SRAM - Asynchronous
number of ports	1
memory size	2Mb (128K x 16)
memory type	Volatile
memory format	SRAM
chip density (bit)	2M
max. access time (ns)	10
operating current (ma)	90
number of bits/word (bit)	16
number of words	128K
timing type	Asynchronous
access time	10ns
memory interface	Parallel
write cycle time - word, page	10ns
data rate architecture	SDR

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Кнопки

CY7C1011DV33-10ZSXI, SRAM, 2 Мбит, 128К x 16бит, 3В до 3.6В, TSOP-II, 44 вывод(-ов), 10 нс