IPB083N10N3GATMA1, Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
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Артикул: IPB083N10N3GATMA1
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Semiconductor - Discrete > Transistors > FET - MOSFETInfineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families.
Информация о производителе | |
Производитель | INFINEON TECHNOLOGIES AG. |
Основные | |
Дата загрузки | 30.04.2024 |
Время загрузки | 19:52:30 |
Бренд | INFINEON TECHNOLOGIES AG. |
Вес и габариты | |
automotive | Unknown |
channel mode | Enhancement |
channel mode: | Enhancement |
channel type | N |
configuration | Single |
configuration: | Single |
eccn (us) | EAR99 |
eu rohs | Compliant with Exemption |
factory pack quantity: factory pack quantity: | 1000 |
fall time: | 8 ns |
forward diode voltage | 1.2V |
forward transconductance - min: | 45 S |
id - continuous drain current: | 80 A |
категория | Электронные компоненты/Микросхемы |
manufacturer: | Infineon |
maximum continuous drain current | 80 A |
maximum continuous drain current (a) | 80 |
maximum drain source resistance | 15.1 mΩ |
maximum drain source resistance (mohm) | 8.3@10V |
maximum drain source voltage | 100 V |
maximum drain source voltage (v) | 100 |
maximum gate source leakage current (na) | 100 |
maximum gate source voltage | -20 V, +20 V |
maximum gate source voltage (v) | ±20 |
maximum gate threshold voltage | 3.5V |
maximum gate threshold voltage (v) | 03.05.2024 |
maximum idss (ua) | 1 |
maximum operating temperature | +175 °C |
maximum operating temperature: | +175 C |
maximum operating temperature (°c) | 175 |
maximum power dissipation | 125 W |
maximum power dissipation (mw) | 125000 |
minimum gate threshold voltage | 2V |
minimum operating temperature | -55 °C |
minimum operating temperature: | -55 C |
minimum operating temperature (°c) | -55 |
mounting | Surface Mount |
mounting style: | SMD/SMT |
mounting type | Surface Mount |
number of channels: | 1 Channel |
number of elements per chip | 1 |
package / case: | TO-263-3 |
package type | D2PAK(TO-263) |
packaging | Tape and Reel |
партномер | 8021884605 |
part # aliases: | IPB083N10N3 G SP000458812 |
part status | Active |
pcb changed | 2 |
pd - power dissipation: | 125 W |
pin count | 3 |
ppap | Unknown |
process technology | OptiMOS 3 |
product category | Power MOSFET |
product category: | MOSFET |
product type: | MOSFET |
qg - gate charge: | 55 nC |
rds on - drain-source resistance: | 7.2 mOhms |
rise time: | 42 ns |
series | OptiMOS 3 |
series: | OptiMOS 3 |
standard package name | TO-263 |
subcategory: | MOSFETs |
supplier package | D2PAK |
tab | Tab |
technology: | Si |
tradename: | OptiMOS |
transistor configuration | Single |
transistor material | Si |
transistor polarity: | N-Channel |
transistor type: | 1 N-Channel |
typical fall time (ns) | 8 |
typical gate charge @ 10v (nc) | 42 |
typical gate charge @ vgs | 42 nC @ 10 V |
typical gate charge @ vgs (nc) | 42@10V |
typical input capacitance @ vds (pf) | 2990@50V |
typical rise time (ns) | 42 |
typical turn-off delay time: | 31 ns |
typical turn-off delay time (ns) | 31 |
typical turn-on delay time: | 18 ns |
typical turn-on delay time (ns) | 18 |
vds - drain-source breakdown voltage: | 100 V |
vgs - gate-source voltage: | -20 V, +20 V |
vgs th - gate-source threshold voltage: | 2 V |
width | 9.45mm |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26