MAX22702DASA+, Gate Driver, 1 канал(-ов), Высокая Сторона и Низкая Сторона, GaN HEMT, SiC MOSFET, 8 вывод(-ов)

Полупроводники - Микросхемы\Микросхемы Управления Питанием\Драйверы ЗатворовSingle-channel isolated gate driver with ultra-high common-mode transient immunity (CMTI) of 300KV/µs (typ). The devices is designed to drive silicon-carbide (SiC) or gallium-nitride (GaN) transistors in various inverter or motor control applications with different output gate-drive circuitry and B-side supply voltages. It features variants with output options for adjustable undervoltage lockout UVLO. Devices has integrated digital galvanic isolation using Maxim's proprietary process technology. Also features isolation for a withstand voltage rating of 3KVRMS (narrow SOIC package) for 60 seconds. It supports a minimum pulse width of 20ns with a maximum pulse width distortion of 2ns. The MAX22702 has a maximum RDSON of 1.25ohm for the low-side driver. It has a maximum RDSON of 4.5ohm for the high side driver. Applications include isolated gate driver for inverters, motor drives, UPS and PV Inverters. • High CMTI (300KV/µs, typ)• Robust galvanic isolation• Withstands ±5KV surge between GNDA and VSSB with 1.2/50µs waveform• Precision UVLO• Differential input