ISO5851DWR, Galvanically Isolated Gate Drivers 5.7kVrms, 2.5A/5A single-channel isolated gate driver with active protection features 16-SOIC

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Артикул: ISO5851DWR
Электронные компоненты Микросхемы Драйверы MOSFET и IGBT Texas Instruments ISO5851DWR, Galvanically Isolated Gate ...
Texas Instruments
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ПроизводительTexas Instruments
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Дата загрузки29.04.2024
Время загрузки5:58:38
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Semiconductors\Power Management ICs\Galvanically Isolated Gate DriversISO5851/ISO5851-Q1 IGBT/MOSFET Gate DriverTexas Instruments ISO5851/ISO5851-Q1 Isolated IGBT/MOSFET Gate Driver is a 5.7kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5A source and 5A sink current. The input side operates from a single 3V to 5.5V supply. The output side allows for a supply range from minimum 15V to maximum 30V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76ns assures accurate control of the output stage. Typical applications include industrial motor control drives, industrial power supplies, solar inverters, HEV and EV power modules, and induction heating. The ISO5851-Q1 devices are AEC-Q100 qualified for automotive applications.
Информация о производителе
ПроизводительTexas Instruments
Основные
Дата загрузки29.04.2024
Время загрузки5:58:38
БрендTexas Instruments
Вес и габариты
configuration:Inverting, Non-Inverting
factory pack quantity: factory pack quantity:2000
fall time:20 ns
isolation voltage:8 kV
категорияЭлектронные компоненты/Микросхемы
manufacturer:Texas Instruments
maximum operating temperature:+125 C
minimum operating temperature:-40 C
moisture sensitive:Yes
mounting style:SMD/SMT
number of drivers:1 Driver
number of outputs:1 Output
output current:2.5 A
output voltage:15 V to 30 V
package / case:SOIC-16
партномер8004999605
pd - power dissipation:600 mW
product:Isolated Gate Drivers
product category:Galvanically Isolated Gate Drivers
product type:Galvanically Isolated Gate Drivers
propagation delay - max:110 ns
rise time:20 ns
series:ISO5851
subcategory:PMIC-Power Management ICs
supply voltage - max:5.5 V
supply voltage - min:3 V
technology:Si
вес, г0.67
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