ADG619BRMZ, Аналоговый переключатель, 1 канал(-ов), SPDT, 6.5 Ом, 2.7В до 5.5В, ± 2.7В до ± 5.5В, MS
В избранноеВ сравнение
- Обзор
- Характеристики
- Отзывы (0)
- Реквизиты
Полупроводники - Микросхемы\Коммутаторы, Мультиплексоры и Демультиплексоры\Аналоговые ПереключателиADG619 is a monolithic, CMOS single-pole double-throw (SPDT) switch. This switch conducts equally well in both directions when the device is on. This offers a low on resistance of 4ohm, which is matched to within 0.7ohm between channels. This switch also provides low power dissipation, yet result in high switching speeds. This exhibits break-before-make switching action, thus preventing momentary shorting when switching channels. Typical applications are automatic test equipment, power routing, communication systems, data acquisition systems, sample-and-hold systems, avionics, relay replacement, battery-powered systems.
• Low power dissipation, fast tON/tOFF• Input current (digital inputs) is 0.005µA typ(at VIN=VINL/VINH, VDD=+5V ± 10%, VSS=-5V ± 10%)• Bandwidth (-3dB) is 190MHz typ (at RL=50 ohm, CL=5pF, VDD=+5V ± 10%, VSS=-5V ± 10%, GND=0V)• Source off leakage is ±0.01nA typ (VS=±4.5 V, VD=±4.5V, VDD=+V ± 10%,
• Low power dissipation, fast tON/tOFF• Input current (digital inputs) is 0.005µA typ(at VIN=VINL/VINH, VDD=+5V ± 10%, VSS=-5V ± 10%)• Bandwidth (-3dB) is 190MHz typ (at RL=50 ohm, CL=5pF, VDD=+5V ± 10%, VSS=-5V ± 10%, GND=0V)• Source off leakage is ±0.01nA typ (VS=±4.5 V, VD=±4.5V, VDD=+V ± 10%,
Отзывов нет









![IRF610PBF, Транзистор, N-канал 200В 3.3А [TO-220AB] IRF610PBF, Транзистор, N-канал 200В 3.3А [TO-220AB]](/wa-data/public/shop/products/24/35/203524/images/236715/236715.300x0.jpg)
![КТ502Д, Биполярный транзистор, PNP, -60В, -0.15А, 0.35Вт, 5МГц, h21e=40…120 [КТ-26 / TO-92] КТ502Д, Биполярный транзистор, PNP, -60В, -0.15А, 0.35Вт, 5МГц, h21e=40…120 [КТ-26 / TO-92]](/wa-data/public/shop/products/92/71/27192/images/37691/37691.300x0.jpg)








