IR Phototransistor 870 nm 20 V 0805

Подробное описание

81 ₽

– +

Бонус: 1.62 !

Бонусная программа

Итого: 81 ₽

Купить

Optical Sensors / Solar CellsФототранзистор IR Chip Silicon 870nm Automotive 2-Pin SMD T / R

Основные
вес, г	0.01
type	IR Chip
pin count	2
packaging	Tape and Reel
automotive	Yes
eu rohs	compliant
maximum operating temperature (°c)	100
mounting	surface mount
part status	active
pcb changed	2
ppap	Unknown
standard package name	SMD
supplier package	SMD
eccn (us)	ear99
maximum power dissipation (mw)	100
minimum operating temperature (°c)	-40
polarity	NPN
Вес и габариты
number of channels per chip	1
material	Silicon
lens shape type	Flat
peak wavelength (nm)	870
maximum collector-emitter voltage (v)	20
maximum collector current (ma)	20
fabrication technology	NPN Transistor
half intensity angle degrees (°)	120
maximum collector-emitter saturation voltage (v)	0.4
maximum dark current (na)	100
maximum emitter-collector voltage (v)	7
maximum light current (ua)	675
phototransistor type	Phototransistor
viewing orientation	Top View

Отзывов нет

Кнопки