Сравнение

ZXMP3A16GTA, Транзистор P-MOSFET, полевой, -30В, -5,9А, 2Вт, SOT223
Цена 240
Информация о производителе
Основные
вес, г 0.1
mounting type Surface Mount
package type SOT-223
minimum operating temperature -55 C
width 3.7mm
pin count 3
maximum operating temperature +150 C
Вес и габариты
number of elements per chip 1
channel type P
transistor configuration Single
maximum drain source voltage 30 V
maximum gate source voltage -20 V, +20 V
maximum continuous drain current 7.5 A
transistor material Si
maximum drain source resistance 70 mΩ
channel mode Enhancement
minimum gate threshold voltage 1V
rds on - drain-source resistance 45mО© @ 4.2A,10V
transistor polarity P Channel
vds - drain-source breakdown voltage 30V
vgs - gate-source voltage 1V @ 250uA
maximum power dissipation 3.9 W
typical gate charge @ vgs 29.6 nC 10 V
continuous drain current (id) @ 25в°c 5.4A
power dissipation-max (ta=25в°c) 2W
Меню
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